Patent · US Active

Apparatus comprising a first transistor including a channel in a fin and a second transistor including a channel in a fin

US8742505B2 · kind B2 · utility

0Cited by

10References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Berthold · Munich, DE
Christian Pacha · Birkenfeld, DE
Klaus von Arnim · Munich, DE

Key dates

Filing date	Jul 5, 2013
Grant date	Jun 3, 2014
Priority date	—
Expiry date	Jul 5, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/40
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first transistor being doped with a first dopant of a first polarity and counter-doped with a second dopant of a second polarity opposite to the first polarity, a concentration of the first dopant being approximately equal to a concentration of the second dopant, wherein the first transistor and the second transistor are of a same conductivity type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.