Semiconductor device and method of providing Z-interconnect conductive pillars with inner polymer core
US8742579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jul 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.