Patent · US Active

Semiconductor structure and method for making same

US8742598B2 · kind B2 · utility

3Cited by

2References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventor

Dirk Meinhold · Dresden, DE

Key dates

Filing date	Oct 5, 2011
Grant date	Jun 3, 2014
Priority date	—
Expiry date	Oct 5, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01029
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One or more embodiments relate to a semiconductor structure, comprising: a conductive pad, the conductive pad including a plurality of laterally spaced apart gaps diposed at least partially through the conductive pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.