Gate driving circuit
US8742802B2 · kind B2 · utility
1Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Apr 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/08142
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A highly-reliable gate driving circuit achieved by suppressing the amount of hot-carriers generated in a MOSFET. In the gate driving circuit having NOEMI circuits, same-type NOEMI circuits are connected in series with a p-channel MOSFET constituting a gate charging circuit and an n-channel MOSFET constituting a gate discharging circuit, respectively, so as to suppress the amount of hot-carriers generated in the p-channel MOSFET and the n-channel MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.