Display device
US8743307B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 7, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jul 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
Abstract
A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.