Self-referenced magnetic random access memory element comprising a synthetic storage layer
US8743597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns a MRAM element comprising a magnetic tunnel junction comprising: a storage layer, a sense layer, and a tunnel barrier layer included between the storage layer and the sense layer; the storage layer comprising a first magnetic layer having a first storage magnetization; a second magnetic layer having a second storage magnetization; and a non-magnetic coupling layer separating the first and second magnetic layers such that the first storage magnetization is substantially antiparallel to the second storage magnetization; the first and second magnetic layers being arranged such that: at a read temperature the first storage magnetization is substantially equal to the second storage magnetization; and at a write temperature which is higher than the read temperature the second storage magnetization is larger than the first storage magnetization. The disclosed MRAM element generates a low stray field when the magnetic tunnel junction is cooled at a low temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.