Doped aluminum nitride crystals and methods of making them
US8747552B2 · kind B2 · utility
18Cited by
101References
16Claims
0Family size
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Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Apr 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.