β-Ga2O3 single crystal growing method including crystal growth method
US8747553B2 · kind B2 · utility
2Cited by
22References
12Claims
0Family size
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Key dates
| Filing date | Aug 13, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Aug 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a p-type thin film of β-Ga2O3 includes preparing a substrate including a β-Ga2O3 single crystal, and growing a p-type thin film of β-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.