Ion-induced atomic layer deposition of tantalum
US8747964B2 · kind B2 · utility
28Cited by
65References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Systems, methods, and apparatus for depositing a tantalum layer on a wafer substrate are disclosed. In one aspect, a tantalum layer may be deposited on a surface of a wafer substrate using an ion-induced atomic layer deposition process with a tantalum precursor. A copper layer may be deposited on the tantalum layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.