Ultra high voltage SiGe HBT and manufacturing method thereof

US8748238B2 · kind B2 · utility

Assignee

• SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. · CN

Inventors

• Donghua Liu · Shanghai, CN
• Jing Shi · Beijing, CN
• Wenting Duan · Shanghai, CN
• Wensheng Qian · Shanghai, CN
• Jun Hu · Shanghai, CN

Key dates

• Filing date: Nov 19, 2012
• Grant date: Jun 10, 2014
• Expiry date: Dec 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112

Abstract

An ultra high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, in which, a collector region is formed between two isolation structures; a pseudo buried layer is formed under each isolation structure and each side of the collector region is connected with a corresponding pseudo buried layer; a SiGe field plate is formed on each of the isolation structures; each pseudo buried layer is picked up by a first contact hole electrode and each SiGe field plate is picked up by a second contact hole electrode; and each first contact hole electrode is connected to its adjacent second contact hole electrode and the two contact hole electrodes jointly serve as an emitter. A manufacturing method of the ultra high voltage SiGe HBT is also disclosed.