Jun Hu
48Patents
8h-index
29Co-inventors
71Inventor score
Filing activity: Jun 16, 2004 → Mar 16, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8698196B2 | Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage | Electricity | 24 | Active |
| US8575685B2 | Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path | Electricity | 19 | Active |
| US8896131B2 | Cascode scheme for improved device switching behavior | Electricity | 16 | Active |
| US7577545B2 | Method and system for estimating rotor angular position and rotor angular velocity at low speeds or standstill | Electricity | 15 | Active |
| US8785279B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 14 | Active |
| US7072790B2 | Shaft sensorless angular position and velocity estimation for a dynamoelectric machine based on extended rotor flux | Electricity | 14 | Expired |
| US8710585B1 | High voltage fast recovery trench diode | Electricity | 13 | Active |
| US9129822B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 9 | Active |
| US8907414B2 | High voltage fast recovery trench diode | Electricity | 8 | Active |
| US9318587B2 | Injection control in semiconductor power devices | Electricity | 8 | Active |
| US9160264B2 | Initial rotor position detection and start-up system for a dynamoelectric machine | Electricity | 6 | Active |
| US9048282B2 | Dual-gate trench IGBT with buried floating P-type shield | Electricity | 6 | Active |
| US7952896B2 | Power conversion architecture with zero common mode voltage | Electricity | 5 | Active |
| US8421185B2 | Parasitic vertical PNP bipolar transistor in BiCMOS process | Electricity | 4 | Active |
| US9000481B2 | Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage | Electricity | 4 | Active |
| US7042728B2 | Clamping structure and heat dissipating module using same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8420475B2 | Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process | Electricity | 4 | Active |
| US9620630B2 | Injection control in semiconductor power devices | Electricity | 4 | Active |
| US8822300B2 | Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage | Electricity | 3 | Active |
| US8674480B2 | High voltage bipolar transistor with pseudo buried layers | Electricity | 2 | Active |
| US8748238B2 | Ultra high voltage SiGe HBT and manufacturing method thereof | Electricity | 2 | Active |
| US10038089B2 | SGT MOSFET with adjustable CRSS and CISS | Electricity | 2 | Active |
| US9123770B2 | Charge reservoir IGBT top structure | Electricity | 2 | Active |
| US8598678B2 | Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process | Electricity | 1 | Active |
| US9450083B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.