Patent · US Active

Semiconductor-on-insulator integrated circuit with interconnect below the insulator

US8748245B1 · kind B1 · utility

12Cited by

4References

13Claims

0Family size

Assignee

IO Semiconductor, Inc. · US

Inventors

Michael A. Stuber · Carlsbad, US
Stuart B. Molin · Carlsbad, US
Chris Brindle · Poway, US

Key dates

Filing date	Mar 27, 2013
Grant date	Jun 10, 2014
Priority date	—
Expiry date	Mar 27, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit fabricated on a semiconductor-on-insulator transferred layer is described. The integrated circuit includes an interconnect layer fabricated on the back side of the insulator. This interconnect layer connects active devices to each other through holes etched in the insulator. This structure provides extra layout flexibility and lower capacitance, thus enabling higher speed and lower cost integrated circuits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.