Method for manufacturing a tunneling field effect transistor with a U-shaped channel
US8748267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.