Soft material wafer bonding and method of bonding
US8748885B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | May 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.