Continuous reflection curved mirror structure of a vertical light-emitting diode
US8748928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2013 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jul 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.