Methods and structures for electrostatic discharge protection
US8748936B2 · kind B2 · utility
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2References
23Claims
0Family size
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Key dates
| Filing date | Jul 20, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first well region of a first conductivity type, a second well region of a second conductive type within the first well region. A first region of the first conductivity type and a second region of the second conductivity type are disposed within the second well region. A third region of the first conductivity type and a fourth region of the second conductivity type are disposed within the first well region, wherein the third region and the fourth region are separated by the second well region. The semiconductor device also includes a switch device coupled to the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.