Switching element and manufacturing method thereof
US8748975B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A switching element is provided having a semiconductor substrate. A trench gate electrode is formed in the upper surface of the semiconductor substrate. An n-type first semiconductor region, a p-type second semiconductor region, and an n-type third semiconductor region are formed in a region in contact with a gate insulating film in the semiconductor substrate. At a position below the second semiconductor region, there is formed a p-type fourth semiconductor region connected to the second semiconductor region and opposing the gate insulating film via the third semiconductor region and containing boron. A high-concentration-carbon containing region having a carbon concentration higher than that of a semiconductor region exposed on the lower surface of the semiconductor substrate is formed in at least a part of the portion of the third semiconductor region, positioned between the fourth semiconductor region and the gate insulating film, that is in contact with the fourth semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.