Electronic device with controlled threshold voltage
US8748986B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jul 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
Structures and methods of fabrication thereof related to an improved semiconductor on insulator (SOI) transistor formed on an SOI substrate. The improved SOI transistor includes a substantially undoped channel extending between the source and the drain, an optional threshold voltage set region positioned below the substantially undoped channel, and a screening region positioned below the threshold voltage set region. The threshold voltage of the improved SOI transistor can be adjusted without halo implants or threshold voltage implants into the channel, using the position and/or dopant concentration of the screening region and/or the threshold voltage set region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.