Fin field effect transistors
US8748989B2 · kind B2 · utility
22Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a major surface; a plurality of first trenches having a first width and extending downward from the substrate major surface to a first height, wherein a first space between adjacent first trenches defines a first fin; and a plurality of second trenches having a second width less than first width and extending downward from the substrate major surface to a second height greater than the first height, wherein a second space between adjacent second trenches defines a second fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.