Semiconductor device and method for forming the same
US8749067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Apr 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device. The semiconductor device comprises contact plugs that comprise a first contact plug formed by a first barrier layer arranged on the source and drain regions and a tungsten layer arranged on the first barrier layer; and second contact plugs comprising a second barrier layer arranged on both of the metal gate and the first contact plug and a conductive layer arranged on the second barrier layer. The conductivity of the conductive layer is higher than that of the tungsten layer. A method for forming the semiconductor device is also provided. The present invention provides the advantage of enhancing the reliability of the device when using the copper contact technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.