Power semiconductor module and its attachment structure
US8749977B2 · kind B2 · utility
4Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module includes: a first metal substrate on which a power semiconductor device is mounted; a second metal substrate on which a power semiconductor device is not mounted; and an electrically insulating resin package which seals the first metal substrate and the second metal substrate. The back surface of the first metal substrate on the side opposite to the mounting surface of the power semiconductor device is made to expose outside the resin package to form a heat dissipation surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.