Integrated circuits with asymmetric and stacked transistors
US8750026B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2013 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Asymmetric transistors may be formed by creating pocket implants on one source-drain terminal of a transistor and not the other. Asymmetric transistors may also be formed using dual-gate structures having first and second gate conductors of different work functions. Stacked transistors may be formed by stacking two transistors of the same channel type in series. One of the source-drain terminals of each of the two transistors is connected to a common node. The gates of the two transistors are also connected together. The two transistors may have different threshold voltages. The threshold voltage of the transistor that is located higher in the stacked transistor may be provided with a lower threshold voltage than the other transistor in the stacked transistor. Stacked transistors may be used to reduce leakage currents in circuits such as memory cells. Asymmetric transistors may also be used in memory cells to reduce leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.