Reading a cross point cell array
US8750033B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Nov 30, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A mechanism is provided for reading a cross point cell array. Voltage biasing is applied to the cross point cell array to determine a state of a target cell on a selected bit line. A negative magnetic field is generated for a selected write bit line corresponding to the target cell. A first current is measured through a selected word line responsive to the negative magnetic field. A positive magnetic field is generated for the selected write bit line corresponding to the target cell. A second current is measured through the selected word line responsive to the positive magnetic field. The state of the target cell is determined based on the first current relative to the second current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.