Gallium arsenide solar cell with germanium/palladium contact

US8753918B2 · kind B2 · utility

Assignee

• Emcore Solar Power, Inc. · US

Inventors

• Tansen Varghese · Regensburg, DE
• Arthur Cornfeld · Sandia Park, US

Key dates

• Filing date: Sep 4, 2012
• Grant date: Jun 17, 2014
• Expiry date: Sep 4, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

A method of forming a solar cell including: providing a semiconductor body including at least one photoactive junction; forming a semiconductor contact layer composed of GaAs deposited over the semiconductor body; and depositing a metal contact layer including a germanium layer and a palladium layer over the semiconductor contact layer so that the specific contact resistance is less than 5×10−4 ohms-cm2.