Methods of forming laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers
US8753948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
A lateral diffused metal oxide semiconductor (LDMOS) transistor is provided. The LDMOS transistor includes a substrate having a source region, channel region, and a drain region. A first implant is formed to a first depth in the substrate. A gate electrode is formed over the channel region in the substrate between the source region and the drain region. A second implant is formed in the source region of the substrate; the second implant is laterally diffused under the gate electrode a predetermined distance. A third implant is formed to a second depth in the drain region of the substrate; the second depth is less than the first depth. A method for forming the LDMOS transistor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.