Patent · US Active

Method for producing a connection region on a side wall of a semiconductor body

US8753982B2 · kind B2 · utility

0Cited by

12References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Carsten Ahrens · Birkenfeld, DE
Berthold Schuderer · Regensburg, DE
Stefan Willkofer · Munich, DE

Key dates

Filing date	May 10, 2012
Grant date	Jun 17, 2014
Priority date	—
Expiry date	May 10, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01029
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.