Patent · US Active

Method and apparatus for forming silicon nitride film

US8753984B2 · kind B2 · utility

31Cited by

4References

8Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Hiroki Murakami · Saitama, JP
Yosuke Watanabe · Tokyo, JP
Kazuhide Hasebe · Nirasaki, JP

Key dates

Filing date	Dec 21, 2011
Grant date	Jun 17, 2014
Priority date	—
Expiry date	May 22, 2032

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/45525
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.