Semiconductor device
US8754481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An SGT-based static memory cell which is a six-transistor SRAM cell includes an SGT driver transistor including a first gate electrode surrounding a first gate insulating film and composed of at least a metal; an SGT selection transistor including a second gate electrode surrounding a second gate insulating film and composed of at least a metal; an SGT load transistor including a third gate electrode surrounding a third gate insulating film and composed of at least a metal; and a gate wire connected to the second gate electrode. An island-shaped semiconductor layer of the driver transistor has a peripheral length that is less than twice that of an island-shaped semiconductor layer of the selection transistor. A voltage applied to the second gate electrode is lower than a voltage applied to a first-conductivity-type high-concentration semiconductor layer on the upper part of the island-shaped semiconductor layer of the selection transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.