Semiconductor device and manufacturing method thereof
US8754482B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2011 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | May 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and its manufacturing method are provided. The semiconductor device comprises: a semiconductor substrate of a first semiconductor material, a gate structure on the semiconductor substrate, a crystal lattice dislocation line in a channel under the gate structure for generating channel stress, wherein the crystal lattice dislocation line being at an angle to the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.