Structure to increase resistance to electromigration
US8754508B2 · kind B2 · utility
47Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Dec 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a recess in a polymer layer between two adjacent metal lines and over passivation layer or anti-electromigration layers on redistribution metal lines to increase the resistance to electromigration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.