Patent · US Active

Wafer-level interconnect for high mechanical reliability applications

US8754524B2 · kind B2 · utility

6Cited by
6References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 16, 2012
Grant dateJun 17, 2014
Priority date
Expiry dateFeb 16, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An interconnect structure comprises a solder including nickel (Ni) in a range of 0.01 to 0.20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The IMC layer comprises a compound of copper and nickel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.