Semiconductor device and manufacturing method thereof
US8754532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2013 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Feb 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a supporting substrate; a semiconductor substrate that includes a first surface in which at least one layer is formed and a second surface that is positioned on an opposite side to the first surface, and is pasted to a surface of the supporting substrate with adhesive such that the first surface faces the supporting substrate side; a protective film that is formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from a region between the supporting substrate and the semiconductor substrate, and including a perimeter part that is positioned outside a perimeter part of the adhesive, and positioned inside a perimeter part of the supporting substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.