Monolithic three-dimensional semiconductor device and structure

US8754533B2 · kind B2 · utility

Assignee

• Monolithic 3D Inc. · US

Inventors

• Zvi Or-Bach · San Jose, US
• Brian Cronquist · Klamath Falls, US
• Israel Beinglass · Sunnyvale, US
• Jan Lodewijk de Jong · Cupertino, US
• Deepak C. Sekar · Sunnyvale, US

Key dates

• Filing date: Nov 18, 2010
• Grant date: Jun 17, 2014
• Expiry date: Nov 18, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a first mono-crystallized layer including first transistors, and a first metal layer forming at least a portion of connections between the first transistors; and a second layer including second transistors, the second transistors including mono-crystalline material, the second layer overlying the first metal layer, wherein the first metal layer includes aluminum or copper, and wherein the second layer is less than one micron in thickness and includes logic cells.