Bipolar spin-transfer switching
US8755222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2011 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Feb 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/385
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultra-fast energy efficient switching. OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer, exhibit improved performance over prior art devices. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy less than 450 fJ and may be reliably observed at room temperature with 0.7 V amplitude pulses of 500 ps duration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.