Method for producing a multiplicity of semiconductor wafers by processing a single crystal

US8758537B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Hans Oelkrug · Tittmoning, DE
• Josef Schuster · Birkenfeld, DE

Key dates

• Filing date: Apr 15, 2011
• Grant date: Jun 24, 2014
• Expiry date: Jul 27, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T156/1052
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis.