Patent · US Active

Semiconductor packages and methods of fabricating the same

US8759147B2 · kind B2 · utility

47Cited by
9References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 17, 2011
Grant dateJun 24, 2014
Priority date
Expiry dateOct 19, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18161
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.