Finlike structures and methods of making same

US8759173B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ming-Hsi Yeh · Hsinchu, TW
• Chi-Ming Yang · Hsinchu, TW
• Chin-Hsiang Lin · Hsinchu, TW

Key dates

• Filing date: Sep 18, 2013
• Grant date: Jun 24, 2014
• Expiry date: Sep 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.