Selective removal of a silicon oxide layer
US8759174B2 · kind B2 · utility
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2References
22Claims
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Key dates
| Filing date | Sep 15, 2009 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.