Pattern forming method
US8759177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jan 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, firstly, an inversion pattern having a periodic pattern in which a first line pattern and a space are inversed and a non-periodic pattern arranged at an interval which is substantially equal to the width of the first line pattern from the end of the periodic pattern is formed above a processing object so as to correspond to the plurality of spaces between a plurality of first line patterns in a first pattern and the space between the first pattern and a second pattern. Next, a sidewall film is formed around the inversion pattern, and the periodic pattern is removed selectively. Thereafter, the processing object is etched using the sidewall pattern formed of the sidewall film and the non-periodic pattern surrounded by the sidewall film as masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.