Radiation hardened bipolar injunction transistor
US8759188B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jul 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/421
Abstract
A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.