Semiconductor device and method for manufacturing semiconductor device
US8759205B2 · kind B2 · utility
0Cited by
5References
15Claims
0Family size
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Key dates
| Filing date | Sep 16, 2010 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.