Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
US8759851B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jul 29, 2013 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Jul 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.