RESURF III-nitride HEMTs

US8759879B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Naveen Tipirneni · Dallas, US
• Sameer Pendharkar · Allen, US
• Jungwoo Joh · Allen, US

Key dates

• Filing date: May 3, 2013
• Grant date: Jun 24, 2014
• Expiry date: May 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A semiconductor device containing a GaN FET has n-type doping in at least one III-N semiconductor layer of a low-defect layer and an electrical isolation layer below a barrier layer. A sheet charge carrier density of the n-type doping is 1 percent to 200 percent of a sheet charge carrier density of the two-dimensional electron gas.