Ultra-high voltage SIGE HBT device and manufacturing method of the same

US8759880B2 · kind B2 · utility

Assignee

• SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. · CN

Inventors

• Jing Shi · Beijing, CN
• Donghua Liu · Shanghai, CN
• Jun Hu · Shanghai, CN
• Wensheng Qian · Shanghai, CN
• Wenting Duan · Shanghai, CN
• Fan Chen · Shanghai, CN

Key dates

• Filing date: Jun 6, 2013
• Grant date: Jun 24, 2014
• Expiry date: Jun 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

An ultra-high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), which includes: a P-type substrate; an N-type matching layer, a P-type matching layer and an N− collector region stacked on the P-type substrate from bottom up; two field oxide regions separately formed in the N− collector region; N+ pseudo buried layers, each under a corresponding one of the field oxide regions and in contact with each of the N-type matching layer, the P-type matching layer and the N− collector region; an N+ collector region between the two field oxide regions and through the N− collector region and the P-type matching layer and extending into the N-type matching layer; and deep hole electrodes, each in a corresponding one of the field oxide regions and in contact with a corresponding one of the N+ pseudo buried layers. A method of fabricating an ultra-high voltage SiGe HBT is also disclosed.