Semiconductor memory device and method of manufacturing the same
US8759921B2 · kind B2 · utility
4Cited by
1References
13Claims
0Family size
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Key dates
| Filing date | Apr 25, 2012 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | May 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
Abstract
A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.