Solid-state image pickup element, method of manufacturing the same, and electronic apparatus using the same
US8759933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2010 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Nov 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.