Memory sensing using temperature compensated initial currents
US8760939B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Jun 24, 2014 |
| Priority date | — |
| Expiry date | Dec 2, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.