Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
US8764995B2 · kind B2 · utility
291Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 17, 2010 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Jan 24, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarizing process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber is substantially co-planar with the top surface of the hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.