Phase shift mask for extreme ultraviolet lithography and method of fabricating same
US8765330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2012 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Aug 24, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.