Formation of group III-V material layers on patterned substrates
US8765501B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Jul 1, 2014 |
| Priority date | — |
| Expiry date | Aug 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.